unisonic technologies co., ltd 5N50K power m o sfet www.unisonic.com.tw 1 of 6 copyright ? 2012 unisonic technologies co., ltd qw-r502-870.a 5a, 500v n-channel power mosfet ? descripti on t he u t c 5N50K is a n n- chan nel p o w e r mosf et a dopti n g ut c?s advanc ed techn o lo g y to provide customers w i th dmos, plan ar stripe techn o lo g y . t h is technolo g y i s design ed to meet the requir e ments of the minim u m on- state resistanc e an d perfec t s w itc h in g perf o rmance. it also can w i t h sta nd hig h ener g y pu lse in the aval anch e and comm unic a tion mo de. t he u t c 5N50K can b e us ed in a ppl icati ons, such as active po w e r factor correction, h i g h efficienc y s w itc hed m ode po w e r suppl ies, el ectronic lam p ba lla st s based on h a lf brid ge topo l o g y . ? features * r ds (on) = 1 . 4 ? @v gs = 10 v * 100 % aval an che tested * high s w itc h in g spee d ? sy mbol 1. ga te 3.source 2.drai n to-220f 1 ? or de r i ng i n form at i o n ordering n u m ber package pi n assi gn me nt packing lead free halogen free 1 2 3 5N50Kl-tf3-t 5N50Kg-tf3-t to-220f g d s tube note: pin assignment: g: gate d: drain s: source http://
5N50K power m o sfet unisonic technologi es co., ltd 2 of 6 w w w . uniso nic.co m.t w q w - r 5 0 2 - 8 7 0 . a ? absolute maxi mu m ra ting s (t c = 25c, unle ss other w i s e specifie d) paramet er symbol r at ings unit drain-s ource voltag e v ds s 500 v gate-source v o ltag e v gss 30 v drain c u rrent contin uo us i d 5 a pulse d (note 2 ) i dm 20 a avala n che c u r r ent (note 2) i ar 5 a avalanche energy singl e puls ed ( note 3) e as 270 mj repetitiv e (not e 2) e ar 7.3 mj peak di ode r e cover y dv/dt (n ote 4) dv/dt 4.5 v/ns po w e r diss i pat ion p d 38 w junctio n t e mperature t j + 150 c storage t e mperature t st g -55~ +150 c note: 1. absol u te ma xi mum ratings ar e those val ues be yo nd w h ich the dev ice cou l d be perm ane n t l y dam ag ed. absol u te ma xi mum ratings ar e stress ratings onl y an d functi onal devic e op er atio n is not i m plie d. 2. repetitiv e rati ng: pulse w i dth lim ited b y ma ximum juncti on t e mperat ure 3. l = 21.5mh, i as = 5.2a, v dd = 50v, r g = 2 5 ? , starting t j = 25c 4. i sd 5a, di/dt 200a/s, v dd bv ds s , startin g t j = 25c ? th er mal dat a paramet er symbol r at ings unit junctio n to ambient ja 62.5 c/w junction to case jc 3.25 c/w
5N50K power m o sfet www.unisonic.com.tw 3 of 6 copyright ? 2010 unisonic technologies co., ltd ver.a ? electric al ch ara cteri s tic s (t c = 25c, unless oth e r w is e specifi ed) paramet er symbol t es t conditions min t yp max unit off characteristics drain-s ource breakd o w n vo l t age bv ds s i d = 250a, v gs = 0 v 500 v breakd o w n vo l t age t e mperature co efficient bv ds s /t j reference to 25c, i d =250a 0.5 v/c drain-source leakage current i dss v ds = 500v, v gs =0 v 1 a v ds = 400v, t c =125c 10 gate- source l eaka ge curr en t fo rw ard i gss v gs = 30v, v ds =0v 100 na reverse v gs = - 30v, v ds = 0 v -100 na on characteristics gate t h reshold voltag e v gs ( th ) v ds =v gs , i d = 250a 2.0 4.0 v static drain-s o urce on-state resistanc e r ds ( on ) v gs =10v, i d =2.5a 1.2 1.4 ? dynamic parameters input cap a cita nce c iss v gs =0 v, v ds = 25v, f= 1.0mhz 480 625 pf output capac itance c oss 80 105 pf reverse t r ansfer capac itanc e c rs s 15 20 pf switching parameters t o tal gate charge q g v gs = 10v, v ds =400v, i d = 5 a (note 1, 2) 18 24 nc gate to source charge q gs 2.2 nc gate to drain charge q gd 9.7 nc turn-on delay time t d ( on ) v dd = 250v, i d =5 a, r g =25 ? (note 1, 2) 12 35 ns rise t i me t r 46 100 ns turn-off delay time t d ( off ) 50 110 ns fall-t i me t f 48 105 ns source- drain diode ratings and characteristics maximum co ntinuo us drai n-s ource di od e fo rw ard c u rren t i s 5 a maximum puls ed drai n-so urc e diod e fo rw ard c u rren t i sm 20 a drain-s ource diod e f o r w ard voltage v sd i s =5 a, v gs =0 v 1 . 4 v reverse recovery time t r r i s =5 a, v gs =0 v, di f /dt= 100a/s (note 1) 263 ns reverse recover y charge q rr 1.9 c note: 1. pulse test: pulse width 300s, duty cycle 2% 2. essentially independent of operating temperature
5N50K power m o sfet unisonic technologi es co., ltd 4 of 6 w w w . uniso nic.co m.t w q w - r 5 0 2 - 8 7 0 . a ? test circuits and waveforms 50k ? 300nf dut v ds 10v 12v cha r ge q gs q gd q g v gs v gs 200nf same type as du t 3ma g a t e c h a r g e t e s t c i r c u i t g a t e c h a r g e w a v e f o r m s resisti v e sw itch in g t est circu i t resisti v e sw itch in g w a v e fo rms 10v t p r g dut l v ds i d v dd t p v dd i as bv dss i d (t) v ds (t) tim e e as = 2 1 li as 2 bv ds s bv dss -v dd unc l a m pe d in duc ti v e s w i t c h ing te s t circ uit unc l a m pe d in duc ti v e s w i t c h ing wav e forms
5N50K power m o sfet unisonic technologi es co., ltd 5 of 6 w w w . uniso nic.co m.t w q w - r 5 0 2 - 8 7 0 . a ? t est circuits and wave form s(cont. ) v ds + - dut r g d v/d t con t ro ll ed by r g i sd co nt rol l e d b y p u l se pe ri od v dd same type as dut i sd v gs l drive r peak diode r eco v e r y d v /d t t est circu i t & w a v e fo rms v gs (driver) i sd (dut) v ds (dut) d= gate pulse width ga te pu lse pe riod 10 v di /d t bo dy dio de re verse c u rren t i rm body diode recover y dv/dt v dd v sd bo dy diode f o rw ard vo ltage dr op i fm , bod y d iod e f o rwa r d curre nt
5N50K power m o sfet unisonic technologi es co., ltd 6 of 6 w w w . uniso nic.co m.t w q w - r 5 0 2 - 8 7 0 . a ? ty pic al c h ara ct e ris tic s dr a i n c u rrent vs. d r ain - s o u r c e b r eakd o w n vo ltage dr ain cu rr en t, i d (a ) d r ain - s o u r ce brea kdow n v o ltag e, b v ds s (v ) 0.5 0 drai n cu rren t vs. gate thres hol d vo ltage dr ai n cu rre n t, i d (a) ga te thresh old vol t a ge, v th (v ) 1.5 2 3.5 13 0 50 10 0 15 0 20 0 25 0 30 0 0 1 00 3 00 500 600 200 0 50 10 0 15 0 20 0 25 0 30 0 40 0 2.5 dra in current, i d (a) drain current, i d (a) utc as s u m e s no r e s pon s i bility f o r equipm e n t f a il u r es th at r e s u lt f r om us ing pr oducts a t v a lue s that ex ceed, ev e n m o m entar ily , r a ted v a lues ( s uch a s m a x i m u m r a tings , oper ating condition r anges , or othe r par am eter s ) lis t ed in pr oducts s pecif ications of any and all u t c pr odu c t s des cr ibed or contained her ein. u t c pr oducts ar e not des igned f o r us e in lif e s upp or t appliances , dev i c es or s y s t e m s w her e m a l f unction of thes e pr o ducts can be r eas onably ex p ected to r es ult in per s onal injur y . r epr oduction in w hole or in p a r t is p r ohibited w i thout the pr ior w r it t en cons ent of the copyr i ght ow n er . t he inf o r m ation pr es e n ted in this docum ent does not f o r m par t of any quotation or contr a ct, is believ e d to be accur a te and r e liable and m a y be changed w i thout notice.
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